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0.5 mm silicon carbide in south africa

Understanding the Chemistry in Silicon Carbide Chemical Vapor

silicon bearing growth species in the chlorinated (tr=0.2-5s) and deposition temperature (T= vapor deposition process of silicon carbide

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2019516-IEC63068-1Edition1.0019-01INTERNATIONALSTANDARDSemiconductordevices–Non-destructiverecognitioncriteriaofdefectsinsiliconcarbidehomoepitaxia

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Direct analysis of silicon carbide powder by total reflection

Three silicon carbide powders having different grain size distributions were ratios show a maximum value at a surface concentration of 12.5 μm/mm2

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behavior of reaction-bonded silicon carbide ceramics in

Weon-Ju Kim; Ho Soo Hwang; Ji Yeon Park, 2002: Corrosion behavior of reaction-bonded silicon carbide ceramics in high-temperature water Silicon infil

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of defects in silicon carbide homoepitaxial wafer -

2019516-IEC63068-Edition1.0019-01INTERNATIONALSTANDARDSemiconductordevices–Non-destructiverecognitioncriteriaofdefectsinsiliconcarbidehomoepitaxial

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in hydrogenated microcrystalline silicon carbide thin

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- cas、、、、—

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of Nitric Oxide on Asbestos and Silicon Carbide Fibers

Per Leanderson, V Lagesson and Christer Tagesson, 1997: Supplement 5: Particle Toxicity || Demonstration of Nitric Oxide on Asbestos and Silicon Carbide

characteristics of n-type polycrystalline silicon carbide

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autoclave made of semiconducting silicon carbide ceramic

Obermayer, D.; Damm, M.; Kappe, C.Oliver., 2013: Simulating microwave chemistry in a resistance-heated autoclave made of semiconducting silicon carbide

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