Synthesis and Characterization of Boron-Doped SiC for Visible
Boron-doped β-SiC (BxSiC) photocatalysts were prepared by in-situ carbothermal reduction, and their photocatalytic performances for H2 evolution under
Superconductivity in Boron-doped SiC
Superconductivity in Boron-doped SiC on ResearchGate, the professional network for scientists. Superconductivity in Boron-doped SiC Article in Journal
Record: Deposition of diamond on boron-doped Si and SiC |
Catalog Record: Deposition of diamond on boron-doped Si and SiC | Hathi Trust Digital LibraryNavigationHome About Our Partnership Our Digital Library Our
Boron-doped SIC copper diffusion barrier films - Patent #
200892-Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition
nano-sic doped mgb2: Topics by WorldWideScience.org
nano-sic doped mgb2 « 1 2 3 4 5 » field pinning potential in C and Ti co-doped during the synthesis of boron from boron oxide
in the preparation of hydrogenated boron-doped Sic films -
Customers with access by IP recognition, remote password, Ope
of boron- and carbon-doped hot-pressed {beta}-SiC by HAADF
Journal Article: Determination of the chemical width of grain boundaries of boron- and carbon-doped hot-pressed {beta}-SiC by HAADF imaging and ELNES
【LRC】rate on the optical properties of Boron-doped a-SiC :H films
argon no longer exhibited hydrogen-related LTPL lines, and subsequent SIMS analysis confirmed the outdiffusion of hydrogen from the boron-doped SiC epilayers
Characterization of boron doped μc-SiC/c-Si heterojunction
Publication » Characterization of boron doped μc-SiC/c-Si heterojunction solar cells. Characterization of boron doped μc-SiC/c-Si heterojunction solar
Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC
Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing on ResearchGate, the professional network for scientists
Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices
P-type 4H-SiC layers formed by ion implantation need high temperature processes, which generate surface roughness, losing and incomplete activation of
Characterization of Boron- and Nitrogen-Doped 6H Silicon
Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The
Ultrathin boron-doped microcrystalline silicon as a novel
2000615-The properties of thin p-type microcrystalline silicon (p-μc-Si:H) films prepared onto boron-doped amorphous silicon carbide (p-a-SiC:H) ha
EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC
EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC, Aluminum (Al), Boron, Deep Acceptors, Electron Paramagnetic Resonance (EPR
Study of Boron and Phosphorus Doping Effects in SiC: H
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Growth of boron doped hydrogenated nanocrystalline cubic
OSTI.GOV Journal Article: Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD
oxidation and electrical behavior of Nb‐doped Ti3SiC2 as
Nb‐doped Ti3SiC2 compounds ((Ti1‐xNbx)3SiC2, x=0%, 2%, 5%, 7%, and 10%) as novel interconnect materials of intermediate temperature solid
of Boron-Doped HFCVD Diamond Films on Ti, SiC, Si and Ta
In the present investigation, titanium (Ti), silicon carbide (SiC), silicon (Si) and tantalum (Ta) samples with the same geometry are selected as
and microwave dielectric properties of boron doped SiC
Synthesis and microwave dielectric properties of boron doped SiC powder by sol-gel method on ResearchGate, the professional network for scientists. Article
Radiative recombination in β-SiC doped with boron - Science
There are two kinds of photoluminescence in β-SiC associated with boron atoms, one of which is caused by the nitrogen donor-boron acceptors
point by polymer-assisted assembly of molecular dopants |
Here we show that air-stable doping of epitaxial graphene on SiC—(VdW) hetero-structures of graphene and hexagonal boron nitride (hBN)
SiC-doped boron nitride nanotubes: computations of 11B and 14
SiC-doped boron nitride nanotubes: computations of 11B and 14N quadrupole coupling constants Mahmoud MirzaeiAffiliated withDepartment of Chemistry, Islamic
and microstructure of ZrB2–SiC ceramics doped with boron
Pressureless sintering mechanism and microstructure of ZrB2–SiC ceramics doped with boron Author links open overlay panelXin-GangWangabWei-MingGu
Ultrathin boron-doped microcrystalline silicon as a novel
2000615-The properties of thin p-type microcrystalline silicon (p-μc-Si:H) films prepared onto boron-doped amorphous silicon carbide (p-a-SiC:H) ha
[1804.06532] Boron-doping of cubic SiC for intermediate band
Publication » Boron doped a-SiCx:H films from. Boron doped a-SiCx:H films fromG. Suchaneck M. Albert K. Schade Physica B Condensed Matter
of Adsorption Properties of NO2 on Boron-Doped Silicon
Advanced Material Science and Technology: First-Principles Study of Adsorption Properties of NOsub2/sub on Boron-Doped Silicon Carbide Nanotube presenc
Electrical properties of photo-CVD boron-doped hydrogenated
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of boron doping by plasma assisted diffusion in a-SiC : H
Screen reader users, click the load entire article button to bypass dynamically loaded article content.Journals
boron doped sic company
Synthesis and Characterization of Boron-Doped SiC for Visible
Boron-doped β-SiC (BxSiC) photocatalysts were prepared by in-situ carbothermal reduction, and their photocatalytic performances for H2 evolution under
Superconductivity in Boron-doped SiC
Superconductivity in Boron-doped SiC on ResearchGate, the professional network for scientists. Superconductivity in Boron-doped SiC Article in Journal
Record: Deposition of diamond on boron-doped Si and SiC |
Catalog Record: Deposition of diamond on boron-doped Si and SiC | Hathi Trust Digital LibraryNavigationHome About Our Partnership Our Digital Library Our
Boron-doped SIC copper diffusion barrier films - Patent #
200892-Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition
nano-sic doped mgb2: Topics by WorldWideScience.org
nano-sic doped mgb2 « 1 2 3 4 5 » field pinning potential in C and Ti co-doped during the synthesis of boron from boron oxide
in the preparation of hydrogenated boron-doped Sic films -
Customers with access by IP recognition, remote password, Ope
of boron- and carbon-doped hot-pressed {beta}-SiC by HAADF
Journal Article: Determination of the chemical width of grain boundaries of boron- and carbon-doped hot-pressed {beta}-SiC by HAADF imaging and ELNES
【LRC】rate on the optical properties of Boron-doped a-SiC :H films
argon no longer exhibited hydrogen-related LTPL lines, and subsequent SIMS analysis confirmed the outdiffusion of hydrogen from the boron-doped SiC epilayers
Characterization of boron doped μc-SiC/c-Si heterojunction
Publication » Characterization of boron doped μc-SiC/c-Si heterojunction solar cells. Characterization of boron doped μc-SiC/c-Si heterojunction solar
Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC
Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing on ResearchGate, the professional network for scientists
Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices
P-type 4H-SiC layers formed by ion implantation need high temperature processes, which generate surface roughness, losing and incomplete activation of
Characterization of Boron- and Nitrogen-Doped 6H Silicon
Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The
Ultrathin boron-doped microcrystalline silicon as a novel
2000615-The properties of thin p-type microcrystalline silicon (p-μc-Si:H) films prepared onto boron-doped amorphous silicon carbide (p-a-SiC:H) ha
EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC
EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC, Aluminum (Al), Boron, Deep Acceptors, Electron Paramagnetic Resonance (EPR
Study of Boron and Phosphorus Doping Effects in SiC: H
| | | | J. Mater. Sci. Techno
size-controlled boron doped nanocrystalline-Si:H/a-SiCx:H
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Growth of boron doped hydrogenated nanocrystalline cubic
OSTI.GOV Journal Article: Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD
oxidation and electrical behavior of Nb‐doped Ti3SiC2 as
Nb‐doped Ti3SiC2 compounds ((Ti1‐xNbx)3SiC2, x=0%, 2%, 5%, 7%, and 10%) as novel interconnect materials of intermediate temperature solid
of Boron-Doped HFCVD Diamond Films on Ti, SiC, Si and Ta
In the present investigation, titanium (Ti), silicon carbide (SiC), silicon (Si) and tantalum (Ta) samples with the same geometry are selected as
and microwave dielectric properties of boron doped SiC
Synthesis and microwave dielectric properties of boron doped SiC powder by sol-gel method on ResearchGate, the professional network for scientists. Article
Radiative recombination in β-SiC doped with boron - Science
There are two kinds of photoluminescence in β-SiC associated with boron atoms, one of which is caused by the nitrogen donor-boron acceptors
point by polymer-assisted assembly of molecular dopants |
Here we show that air-stable doping of epitaxial graphene on SiC—(VdW) hetero-structures of graphene and hexagonal boron nitride (hBN)
SiC-doped boron nitride nanotubes: computations of 11B and 14
SiC-doped boron nitride nanotubes: computations of 11B and 14N quadrupole coupling constants Mahmoud MirzaeiAffiliated withDepartment of Chemistry, Islamic
and microstructure of ZrB2–SiC ceramics doped with boron
Pressureless sintering mechanism and microstructure of ZrB2–SiC ceramics doped with boron Author links open overlay panelXin-GangWangabWei-MingGu
Ultrathin boron-doped microcrystalline silicon as a novel
2000615-The properties of thin p-type microcrystalline silicon (p-μc-Si:H) films prepared onto boron-doped amorphous silicon carbide (p-a-SiC:H) ha
[1804.06532] Boron-doping of cubic SiC for intermediate band
arXiv.org cond-mat arXiv:1804.06532(Help | Advanced search)Full-text links: Download:PDF Other formats (license)
Boron doped a-SiCx:H films from - ResearchGate
Publication » Boron doped a-SiCx:H films from. Boron doped a-SiCx:H films fromG. Suchaneck M. Albert K. Schade Physica B Condensed Matter
of Adsorption Properties of NO2 on Boron-Doped Silicon
Advanced Material Science and Technology: First-Principles Study of Adsorption Properties of NOsub2/sub on Boron-Doped Silicon Carbide Nanotube presenc
Electrical properties of photo-CVD boron-doped hydrogenated
Screen reader users, click the load entire article button to bypass dynamically loaded article content.ScienceD
of boron doping by plasma assisted diffusion in a-SiC : H
Screen reader users, click the load entire article button to bypass dynamically loaded article content.Journals