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is formed on a semiconductor substrate of silicon carbide (hereinafter, SiC substrate) and thereafter, the nickel layer is subjected to heat treatment to

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Silicon carbide also known as carborundum, is a(1881); Albert Colsons heating of silicon Limited formed in the United States and England

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Grains of silicon carbide can be bonded together by sintering to form veryA modified Lely process involving induction heating in graphite yields even

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In order to develop a quick and practical cleaning process for the silicon carbide chemical vapor deposition reactor, the pyrolytic carbon-coated susceptor

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201961- Jun. 1, 2019 - French materials firm Saint-Gobain recently closed the sale of its silicon carbide grains and powders business to Open Gate

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heated autoclave made of semiconducting silicon carbide

Obermayer, D.; Damm, M.; Kappe, C.Oliver., 2013: Simulating microwave chemistry in a resistance-heated autoclave made of semiconducting silicon carbide

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METHOD FOR PRODUCING SILICON CARBIDE (SiC) SINGLE CRYSTAL AND

pThe present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide

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